| 摘要 |
A technology is a semiconductor device and a method of manufacturing the same, capable of reducing capacitance with a storage node contact plug while maintaining a height and resistance of a bit line, by thickly forming a spacer between a bit line and the storage node contact plug. A semiconductor device includes a device isolation layer defining a plurality of active regions formed in a semiconductor substrate, a storage node contact hole exposing two neighboring active regions, a storage node contact plug material provided in the storage node contact hole, a bit line region that divides the storage node contact plug material into two parts and that has a convex portion at a lower portion of a sidewall, a spacer formed over a sidewall of the bit line region including the convex portion and a bit line formed in the bit line region. |
