METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE AND APPARATUS FOR PROCESSING SUBSTRATE

摘要

Disclosed is a method for manufacturing a semiconductor device, which comprises a step wherein an oxynitride film having a predetermined film thickness is formed on a substrate by repeating a cycle, which consists of a step for forming a specific element-containing layer on the substrate by supplying a starting material gas that contains the specific element into a process chamber that contains the substrate, a step for changing the specific element-containing layer into a nitride layer by supplying a nitrogen-containing gas into the process chamber, and a step for changing the nitride layer into an oxynitride layer by supplying an oxygen-containing gas and an inert gas into the process chamber, a plurality of times. The composition of the oxynitride film having a predetermined film thickness is controlled by controlling the partial pressure of the oxygen-containing gas in the process chamber in the step for changing the nitride layer into an oxynitride layer.