| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device having low resistance and capable of obtaining sufficient emission intensity. <P>SOLUTION: A light-emitting device 100 comprises: an n-type GaN semiconductor base 113; a plurality of n-type GaN rod-shaped semiconductors 121 formed spaced apart from one another on the n-type GaN semiconductor base 113 in an upright position; and a p-type GaN semiconductor layer 123 covering the n-type GaN rod-shaped semiconductors 121. The resistance of the n-type GaN rod-shaped semiconductors 121 can be easily reduced by increasing an impurity that provides the rod-shaped semiconductors 121 with an n-type conductivity. For this reason, even if the length of the n-type GaN rod-shaped semiconductors 121 is long, an increase in resistance thereof can be prevented, so that the n-type GaN rod-shaped semiconductors 121 can be evenly emitted from bottom to top. <P>COPYRIGHT: (C)2012,JPO&INPIT |
