发明名称 CHEMICAL MECHANICAL POLISHING PAD AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad which can combine enhancement of planarity of a polished surface and reduction of polishing defects (scratch) in the CMP, and to provide a chemical mechanical polishing method using the chemical mechanical polishing pad. <P>SOLUTION: The chemical mechanical polishing pad has a polishing layer formed of a plurality of layers. The polishing layer has at least a first layer having a polishing surface that comes in contact with a polished article when chemical mechanical polishing is performed, and a second layer that is in contact with the first layer on the surface facing the polishing surface of the first layer. The duro D hardness (D1) of the first layer measured after immersing into water of 23&deg;C for one hour and the duro D hardness (D2) of the second layer measured without immersing into water satisfy a relation D1<D2. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012089599(A) 申请公布日期 2012.05.10
申请号 JP20100233316 申请日期 2010.10.18
申请人 JSR CORP 发明人 NISHIGUCHI NAOKI;SHIDA HIROTAKA;TANO HIROYUKI;TONSHO SHINJI;SATO KEIICHI
分类号 H01L21/304;B24B37/22 主分类号 H01L21/304
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