There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.
申请公布号
US2012111722(A1)
申请公布日期
2012.05.10
申请号
US201013383670
申请日期
2010.07.15
申请人
KODAIRA SHUJI;YOSHIHAMA TOMOYUKI;KAMADA KOUKICHI;HORITA KAZUMASA;HAMAGUCHI JUNICHI;NAKANISHI SHIGEO;TOYODA SATORU;ULVAC, INC.