发明名称 SEMICONDUCTOR DEVICE AND FABRICATING METHOD OF THE SAME
摘要 Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
申请公布号 US2012112316(A1) 申请公布日期 2012.05.10
申请号 US201213355540 申请日期 2012.01.22
申请人 OZAKI YASUTAKA;FUJITSU SEMICONDUCTOR LIMITED 发明人 OZAKI YASUTAKA
分类号 H01L29/92 主分类号 H01L29/92
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