发明名称 HIGH FREQUENCY SOLID STATE SWITCHING FOR IMPEDANCE MATCHING
摘要 In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor in or out of a variable capacitance element of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors are connected in parallel to provide variable impedance for the purpose of impedance matching.
申请公布号 US2012112815(A1) 申请公布日期 2012.05.10
申请号 US201113288712 申请日期 2011.11.03
申请人 MASON CHRISTOPHER C.;ADVANCED ENERGY INDUSTRIES, INC. 发明人 MASON CHRISTOPHER C.
分类号 H03K17/56 主分类号 H03K17/56
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