发明名称 HEATING APPARATUS, PLASMA PROCESSING APPARATUS, AND METHOD OF FORMING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a heating apparatus capable of uniformizing the temperature in planer direction of an object by a simple method. <P>SOLUTION: The heating apparatus 200 includes a plate-like member 2 in which an object is arranged on a surface 2S, four heating elements 3A-3D which are arranged along the surface 2S to heat the object, power supply means connected to the four heating elements 3A-3D, connection state changing means which changes the connection state of any or a plurality of the four heating elements 3A-3D between thereof respectively to serial connection or parallel connection, and temperature detecting means 8 which detects a temperature of the any or the plurality of the four heating elements 3A-3D. The connection state changing means, based on the temperature of the heating elements 3A-3D detected by the temperature detecting means 8, changes the connection state of the any or the plurality of the four heating elements 3A-3D to serial connection or parallel connection respectively so that the heating amount applied on the object becomes uniform in the planer direction. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012089653(A) 申请公布日期 2012.05.10
申请号 JP20100234565 申请日期 2010.10.19
申请人 SHARP CORP 发明人 HOTEIDA NOBUYUKI;TSUNASAWA HIROSHI;SAITO MASANORI
分类号 H01L21/205;C23C16/46;C23C16/509;H05H1/46 主分类号 H01L21/205
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