发明名称 |
LOW COST FABRICATION OF DOUBLE BOX BACK GATE SILICON-ON-INSULATOR WAFERS WITH SUBSEQUENT SELF ALIGNED SHALLOW TRENCH ISOLATION |
摘要 |
A semiconductor substrate structure for manufacturing integrated circuit devices includes a bulk substrate; a lower insulating layer formed on the bulk substrate, the lower insulating layer formed from a pair of separate insulation layers having a bonding interface therebetween; an electrically conductive layer formed on the lower insulating layer; an insulator with etch stop characteristics formed on the electrically conductive layer; an upper insulating layer formed on the etch stop layer; and a semiconductor layer formed on the upper insulating layer. A scheme of subsequently building a dual-depth shallow trench isolation with the deeper STI in the back gate layer self-aligned to the shallower STI in the active region in such a semiconductor substrate is also disclosed. |
申请公布号 |
US2012112309(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201213350889 |
申请日期 |
2012.01.16 |
申请人 |
DENNARD ROBERT H.;GREENBERG DAVID R.;MAJUMDAR AMLAN;SHI LEATHEN;YAU JENG-BANG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DENNARD ROBERT H.;GREENBERG DAVID R.;MAJUMDAR AMLAN;SHI LEATHEN;YAU JENG-BANG |
分类号 |
H01L27/12;H01L21/762 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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