| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reverse-blocking type semiconductor device having a high reliability at a low cost, and a method for manufacturing the same. <P>SOLUTION: A thin semiconductor wafer 101, on which a surface structure 133 and a rear structure 134 constructing a semiconductor chip are formed, is attached to a supporting substrate 141 with a both-sided adhesive tape 137, a trench to be a scribe line is formed on the thin semiconductor wafer 101 by exposing a crystal plane by the wet anisotropic etching, and an isolation layer 145 for keeping a reverse breakdown voltage is formed on a side face of the trench in which the crystal plane is exposed, by the ion implantation and the low temperature anneal or the laser anneal so as to contact with a p-type collector region 110 as a back diffusion layer and extend to the surface side. A collector electrode 111 is cut clean perfectly under the isolation layer 145 by laser dicing, and then the both-sided adhesive tape 137 is peeled off from the collector electrode 111 to form the semiconductor chip provided as the reverse blocking type semiconductor device. <P>COPYRIGHT: (C)2012,JPO&INPIT |
