发明名称 FILM FORMING METHOD
摘要 Disclosed is a film-forming method wherein a manganese-containing film is formed on a substrate having a surface to which an insulating film and a copper wiring line are exposed. The film-forming method includes forming a manganese-containing film on the copper wiring line by a CVD method which uses a manganese compound.
申请公布号 US2012114869(A1) 申请公布日期 2012.05.10
申请号 US201213349991 申请日期 2012.01.13
申请人 TOKYO ELECTRON LIMITED 发明人 MIYOSHI HIDENORI;HARA MASAMICHI
分类号 B05D5/12;C08J7/04 主分类号 B05D5/12
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