| 摘要 |
A method for making a semiconductor device includes providing a substrate of a first conductivity type and having a surface region, forming a well region of a second conductivity type and having a first depth in the substrate, adding a gate dielectric layer overlying the surface region, adding a gate layer overlying the gate dielectric layer, forming a first LDD region of the first conductivity type and having a second depth within the well region, forming an emitter region of the second conductivity type within the first LDD region, and forming a second LDD region of the first conductivity type with the well region, a channel region separates the first and second LDD regions. The method further includes forming a source region being of the first conductivity type within the second LDD region and adding an output pad coupled to both the drain and emitter regions. |
