| 发明名称 |
IC MANUFACTURING METHOD, IC AND APPARATUS |
| 摘要 |
A method of manufacturing an integrated circuit having a substrate comprising a plurality of components and a metallization stack over the components, the metallization stack comprising a first sensing element and a second sensing element adjacent to the first sensing element. |
| 申请公布号 |
US2012112294(A1) |
申请公布日期 |
2012.05.10 |
| 申请号 |
US201113289063 |
申请日期 |
2011.11.04 |
| 申请人 |
NXP B.V. |
发明人 |
VAN DAL MARCUS;HUMBERT AURELIE;MERZ MATTHIAS;PONOMAREV YOURI VICTOROVITCH |
| 分类号 |
H01L29/84;H01L21/02 |
主分类号 |
H01L29/84 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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