| 摘要 |
1,138,237. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORP. 27 July, 1966 [30 July, 1965], No. 33791/66. Heading H1K. In a device comprising a zone of one conductivity type formed as an inclusion in one face of a semi-conductor body or layer of the opposite type with a further inclusion of the opposite type within said zone, the breakdown voltage of the junction between zone and body is increased by providing a guard ring zone forming a PN junction with the body within its depletion region. Typically the device is a planar diffused transistor (Fig. 4) with an annular emitter region and having two concentric guard ring zones associated with the collector junction. In an alternative arrangement a single guard ring disposed on the opposite face of the wafer is used (Fig. 6, not shown). In a controlled rectifier (Fig. 5) a guard ring 40 may be provided for the control junction and another 42 for one of the outer junctions or there may be two concentric guard rings for the central junction. Channelling between the protected junction and its guard ring may be reduced by disposing a suitably biased electrode on a passivating oxide layer overlying the intervening region. Reference has been directed by the Comptroller to Specifications 1,076,371, 1,078,273 and 1,078,547.
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