| 摘要 |
FIELD: information technology. ^ SUBSTANCE: read signal is applied to a bit line connected to a memory array including a plurality of memory cells, each of the plurality of memory cells having a magnetic tunnel junction (MTJ) device; positive voltage is applied to a selected word line connected to a selected memory cell of the memory array; negative voltage is applied to unselected word lines connected to the memory array; and the negative voltage is applied to each word line during a standby state. ^ EFFECT: reduced stray current in magnetic random access memory. ^ 25 cl, 7 dwg |
