| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor with high electric characteristics and high reliability. <P>SOLUTION: A semiconductor device comprises a gate electrode formed on a substrate, an SiO<SB POS="POST">X</SB>film including excessive oxygen formed on the gate electrode, and an oxide semiconductor film formed on the SiO<SB POS="POST">X</SB>film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
