| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a stripping compound which suppresses increase of sheet resistance and corrosion of an aluminum electrode. <P>SOLUTION: The hot melt etching resist is selectively applied to an anti-reflective coating or a selective emitter on a semiconductor wafer. An exposed portion of the anti-reflective coating or selective emitter is etched away using an inorganic acid containing etching liquid to expose the semiconductor surface. The hot melt etching resist is then stripped from the semiconductor using an alkaline stripper which does not compromise the electrical integrity of the semiconductor. The exposed semiconductor is then metalized to form current tracks. <P>COPYRIGHT: (C)2012,JPO&INPIT |
