| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing an inverse prevention type IGBT equipped with an inclined side surface, causing little unwanted etching that reaches the lower side of an etching mask at the time when forming a slope on the side surface of a semiconductor chip, resulting in no contamination with etching liquid. <P>SOLUTION: The manufacturing method includes a first step to form an MOS gate structure 10 in an element active region and an aluminum electrode film 18 on one main surface of an n-type semiconductor substrate 30 whose main surface is a (100) surface, a second step to form an ion implantation damage layer 21 with a p-type dopant as an impure substance by ion implantation or a high-concentration p-type layer 21a which is available by activating the ion implantation damage layer 21 on the other main surface, a third step to form a tapered inclined groove 23 by performing wet anisotropic etching on the other surface of the n-type semiconductor substrate, with the ion implantation damage layer or high-concentration p-type layer 21a as a mask, and a fourth step to form a p-type separation layer 4 on an inclined surface 9a constituting the inclined groove 23 by the ion implantation of the p-type dopant. <P>COPYRIGHT: (C)2012,JPO&INPIT |
