| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a deposition method for forming a good-quality MB<SB POS="POST">x</SB>film (M indicates Zr or Hf and x indicates a number of 1.8 to 2.5) having an M/Zr ratio in an appropriate range using an M(BH<SB POS="POST">4</SB>)<SB POS="POST">4</SB>as a raw material by a thermal CVD method. <P>SOLUTION: In a deposition method, an H<SB POS="POST">2</SB>gas is supplied from a gas supply source 19 into a material container 21 through a gas supply pipe 15a. The contact with the introduced H<SB POS="POST">2</SB>gas allows a Zr(BH<SB POS="POST">4</SB>)<SB POS="POST">4</SB>as a solid raw material to be evaporated in the material container 21. A mixed gas of the H<SB POS="POST">2</SB>gas and the Zr(BH<SB POS="POST">4</SB>)<SB POS="POST">4</SB>gas as a deposition gas is introduced into a processing container 1 through gas supply pipes 15c and 15c1, a gas diffusing space 12 of a shower head 11 and a gas-ejecting hole 13 to form a thin film of a ZrB<SB POS="POST">x</SB>film so as to cover a surface of an insulating film on a wafer W. <P>COPYRIGHT: (C)2012,JPO&INPIT |
