发明名称 |
INTEGRATED CIRCUIT CAPACITORS HAVING SIDEWALL SUPPORTS |
摘要 |
In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.
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申请公布号 |
US2012112317(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US201213356032 |
申请日期 |
2012.01.23 |
申请人 |
KANG DAE-HYUK;YOON BO-UN;LEE KUN-TACK;SHIM WOO-GWAN;CHA JI-HOON;PARK IM-SOO;LEE HYO-SAN;KIM YOUNG-HOO;OH JUNG-MIN |
发明人 |
KANG DAE-HYUK;YOON BO-UN;LEE KUN-TACK;SHIM WOO-GWAN;CHA JI-HOON;PARK IM-SOO;LEE HYO-SAN;KIM YOUNG-HOO;OH JUNG-MIN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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