发明名称 |
DOPED PNICTOGEN CHALCOGENIDE NANOPLATES, METHODS OF MAKING, AND ASSEMBLIES AND FILMS THEREOF |
摘要 |
Embodiments of the invention are directed to doped pnictogen chalcogenide nanoplates, where each nanoplate comprises a rhombohedral crystal of Bi2Te3, Bi2Se3, or Sb2Te3 that is sulfur doped. Another embodiment of the invention is directed to a microwave activated method of preparation of the doped pnictogen chalcogenide nanoplates. Other embodiments of the invention are directed to bulk assemblies or fused films of the doped pnictogen chalcogenide nanoplates and their preparation from the doped pnictogen chalcogenide nanoplates such that the bulk assembly or fused film can be employed in a thermoelectric device.
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申请公布号 |
US2012111385(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US20100856264 |
申请日期 |
2010.08.13 |
申请人 |
RAMANATH GANAPATHIRAMAN;BORCA-TASCIUC THEODORIAN;MEHTA RUTVIK |
发明人 |
RAMANATH GANAPATHIRAMAN;BORCA-TASCIUC THEODORIAN;MEHTA RUTVIK |
分类号 |
H01L35/28;B01J19/12;B32B5/16;B82Y99/00;C04B35/64;C09K5/00;H01L35/34 |
主分类号 |
H01L35/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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