| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an underlayer film for use in an underlayer of a photoresist in a lithography process for manufacturing semiconductor devices, having a high dry etching speed compared with that of the photoresist, causing no intermixing with the photoresist, and capable of flattening the surface of a semiconductor substrate having a hole with large aspect ratio; and to provide an underlayer film forming composition for forming the underlayer. <P>SOLUTION: This underlayer film forming composition, or a composition for forming, by exposure to light, an underlayer film for use in the underlayer of the photoresist, includes a polymerizable substance and a photoinitiator. The polymerizable substance is a polymerizable compound including at least one radically-polymerizable ethylenic unsaturated bond, and the photoinitiator is a photo-radical polymerization initiator. <P>COPYRIGHT: (C)2012,JPO&INPIT |
