| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a microwave plasma source and a plasma processing apparatus using the same capable of suppressing influence by a standing wave of a microwave in a processing container as much as possible and increasing plasma density uniformity in a chamber. <P>SOLUTION: A microwave plasma source 2 comprises a microwave supply part 40. The microwave supply part 40 comprises: a plurality of microwave introduction mechanisms 43 which introduce the microwave into the processing container; and a plurality of phase shifters 46 which adjust the phases of microwaves input to each of the plurality of microwave introduction mechanisms 43. For the plurality of microwave introduction mechanisms 43 adjacent to each other, the microwave plasma source 2 adjusts the phases of the microwaves input to a plurality of adjacent microwave introduction mechanisms 43 with the plurality of phase shifters 46 so that the input phase of one microwave is fixed and the input phase of the other microwave is changed by a periodic waveform. <P>COPYRIGHT: (C)2012,JPO&INPIT |
