发明名称 TRANSPARENT CONDUCTIVE FILM, ITS FORMING METHOD, MEMBER FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a transparent conductive film that has superior gas-barrier properties and transparent conductivity, is reduced in a change of a sheet resistance value even under a high-temperature/high-moisture environment, can keep a low value, and has superior conductivity, and to provide its forming method, a member for an electronic device composed of the transparent conductive film, and the electronic device. <P>SOLUTION: The transparent conductive film has a base material layer, a gas-barrier layer and a transparent conductor layer. The gas barrier layer is constituted of a material containing a silicon atom, an oxygen atom and a carbon atom, As contents of the silicon atom, the oxygen atom and the carbon atom at a surface layer of the gas barrier layer, the silicon atom is at 18.0% to 28.0%, the oxygen atom is at 48.0% yo 66.0%, and the carbon atom is at 10.0 to 28.0% with respect to the 100 atom% of the total of the silicon atom, the oxygen atom and the carbon atom. A vapor permeation ratio of the transparent conductive film under an RH-atmosphere of 40&deg;C and relative humidity 90% is not larger than 6.0g/m<SP POS="POST">2</SP>/day, and a visible light permeation ratio at a wavelength of 550 nm is not smaller than 90%. There are also provided the forming method of the transparent conductive film, the member for the electronic device composed of the transparent conductive film, and the electronic device having the member for the electronic device. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012086378(A) 申请公布日期 2012.05.10
申请号 JP20100232328 申请日期 2010.10.15
申请人 LINTEC CORP 发明人 NAGAMOTO KOICHI;KONDO TAKESHI;NAGANAWA TOMOHITO
分类号 B32B27/00;B32B9/00;G02F1/1333;H01L31/042;H01L51/50;H05B33/02;H05B33/04;H05B33/10;H05B33/14;H05B33/28 主分类号 B32B27/00
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