| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving characteristics. <P>SOLUTION: A semiconductor device comprises: a high-voltage-side drain electrode 11a of a high-voltage-side field-effect transistor 20a; a high-voltage-side gate electrode 12a formed at one side of the high-voltage-side drain electrode 11a with a space therebetween; a source and drain electrode 13a that is formed at one side of the high-voltage-side gate electrode 12a with a space therebetween and serves as a source electrode of the high-voltage-side field-effect transistor 20a and a drain electrode of a low-voltage-side field-effect-transistor 21a; a low-voltage-side gate electrode 14a of the low-voltage-side field-effect-transistor 21a formed at one side of the source and drain electrode 13a with a space therebetween; and a low-voltage-side source electrode 15a of the low-voltage-side field-effect-transistor 21a formed at one side of the low-voltage-side gate electrode 14a with a space therebetween. <P>COPYRIGHT: (C)2012,JPO&INPIT |
