发明名称 NON-VOLATILE STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a non-volatile storage device which suppresses readout disturbance and makes an access speed fast. <P>SOLUTION: A current value and a supply type at which magnetization inversion occurs have a relation of monotonous decrease. This means that a threshold current value at which the magnetization inversion occurs increases by shortening the supply time. Accordingly, the supply time of a readout time is shortened from the point of view of suppression of occurrence of readout disturbance so as to increase the threshold value of a current at which the magnetization inversion occurs, thereby securing a sufficient readout disturbance margin. Therefore, the supply time of a readout current is shortened as compared with the supply time of a write current to secure the readout disturbance margin, so that the occurrence of the readout disturbance can be suppressed. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012089234(A) 申请公布日期 2012.05.10
申请号 JP20120023944 申请日期 2012.02.07
申请人 RENESAS ELECTRONICS CORP 发明人 HIDAKA HIDETO
分类号 G11C11/15 主分类号 G11C11/15
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