发明名称 |
ANTI PUNCH-THROUGH LEAKAGE CURRENT METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND MANUFACTURING METHOD THEREOF |
摘要 |
An anti punch-through leakage current MOS transistor and a manufacturing method thereof are provided. A high voltage deep first type well region and a first type light doping region are formed in a second type substrate. A mask with a dopant implanting opening is formed on the second type substrate. An anti punch-through leakage current structure is formed by implanting the first type dopant through the dopant implanting opening. A doping concentration of the first type dopant of the high voltage deep first type well region is less than that of the anti punch-through leakage current structure and greater than that of the high voltage deep first type well region. A second type body is formed by implanting a second type dopant through the dopant implanting opening. A gate structure is formed on the second type substrate. |
申请公布号 |
US2012112276(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US20100943114 |
申请日期 |
2010.11.10 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE CHUN-YAO;CHEN CHIN-LUNG;CHANG WEI-CHUN;LIN HUNG-TE;HUANG HAN-MIN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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