| 摘要 |
The present invention relates to a transparent semiconductor of a polycrystalline structure, a manufacturing method thereof, and a transparent transistor including the same. According to the present invention, the polycrystalline transparent semiconductor includes a host material as a mixture of one kind, two kinds, or more selected from a group including In2O3, ZnO, Ga2O3, and SnO2 and impurities of one kind or more selected from a group including Al, B, Ce, Hf, F, Ga, Mo, N, Sc, Si, Ta, Ti, W, Zr, Y, and Ge and has the polycrystalline structure and resistivity of 0.1cm to 108cm. |
