发明名称 |
SUB-RESOLUTION ROD IN THE TRANSITION REGION |
摘要 |
The present disclosure provides a photomask. The photomask includes a first integrated circuit (IC) feature formed on a substrate; and a second IC feature formed on the substrate and configured proximate to the first IC feature. The first and second IC features define a dense pattern having a first pattern density. The second IC feature is further extended from the dense pattern, forming an isolated pattern having a second pattern density less than the first pattern density. A transition region is defined from the dense pattern to the isolated pattern. The photomask further includes a sub-resolution rod (SRR) formed on the substrate, disposed in the transition region, and connected with the first IC feature. |
申请公布号 |
US2012115073(A1) |
申请公布日期 |
2012.05.10 |
申请号 |
US20100940230 |
申请日期 |
2010.11.05 |
申请人 |
HO JENG-SHIUN;LO LUKE;LIU TING-CHUN;CHENG MIN-HUNG;SHIH JING-WEI;CHU WEN-HAN;KUO CHENG-CHENG;LIN HUA-TAI;GAU TSAI-SHENG;LIU RU-GUN;LIN YU-HSIANG;HUANG SHANG-YU;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HO JENG-SHIUN;LO LUKE;LIU TING-CHUN;CHENG MIN-HUNG;SHIH JING-WEI;CHU WEN-HAN;KUO CHENG-CHENG;LIN HUA-TAI;GAU TSAI-SHENG;LIU RU-GUN;LIN YU-HSIANG;HUANG SHANG-YU |
分类号 |
G03F1/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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