PURPOSE: A light emitting device manufacturing method is provided to reuse a sapphire substrate by separating a sapphire substrate. CONSTITUTION: A first layer of a first conductivity type semiconductor layer(120) is formed on a first substrate. A bonding layer is formed on the first layer and a second substrate is formed. The first substrate is separated. A third substrate is formed on the first layer which is exposed by separating the first substrate. The second substrate and the bonding layer are separated. An active layer(150) and a second conductivity type semiconductor layer(160) are formed on the first layer which is exposed by separating the second substrate.
申请公布号
KR20120045529(A)
申请公布日期
2012.05.09
申请号
KR20100107135
申请日期
2010.10.29
申请人
LG INNOTEK CO., LTD.
发明人
MOON, JI HYUNG;JEONG, HWAN HEE;CHOI, KWANG KI;LEE, SANG YOUL;SONG, JUNE O