| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method by which a transparent electrode for a photoelectric conversion device excellent in light confinement effect can be formed on a substrate at low cost and the performance of a thin-film photoelectric conversion device to be manufactured can be improved. <P>SOLUTION: The method of manufacturing a photoelectric conversion device includes a step to stack a transparent electrode, at least one crystalline photoelectric conversion unit and a back electrode in order on a light transmissive insulating substrate. The transparent electrode is provided with a first transparent electrode layer having uneven surface wherein zinc oxide is doped with an impurity and a low-resistance second transparent electrode layer containing zinc oxide which is doped with an impurity whose concentration is higher than that of the first transparent electrode layer. The method also includes a step to form the first transparent electrode layer and a step to form the second transparent electrode layer at a half or less of the stacking speed of the first transparent electrode layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
