| 摘要 |
The present invention provides a method for correcting a mask pattern used for dry-etching an object to be etched, such as a silicon wafer or the like, with higher accuracy, and also provides a method for readily manufacturing an acceleration sensor and an angular velocity sensor, each having a significantly small size and excellent reliability. In this method, the object to be etched is first etched by a dry-etching process using a reference mask pattern which is not yet corrected. Then, distribution of the size of expansion of a tapered portion formed in a surface of the object is measured. Thereafter, the measured distribution is approximated by using a quadratic curve (Y = AX 2 +B) so as to determine A and B. Consequently, an amount t of correction for the tapered portion, which is expressed by the following equation (1) and related to a width of an opening of the mask pattern in a position at a distance r from a center of the object to be etched, can be set. In this way, the correction for the tapered portion can be carried out. Additionally, distribution of the size of a tilted portion is measured, and the measured distribution is then approximated by using a straight line (Y = kX) so as to determine k (k>0). Consequently, an amount C x of correction in the X-axial direction and an amount C y of correction in the Y-axial direction, respectively expressed by the following equations (2-1) and (2-2) and related to the width of the opening of the mask pattern in a position corresponding to a position vector r having coordinates (x, y) relative to the center of the object to be etched, can be set, thereby performing the correction for the tilted portion. t = Ar 2 + B / 2 C x = kx C y = ky |
