NON-VOLATILE MEMORY ARRAY WITH RESISTIVE SENSE ELEMENT BLOCK ERASE AND UNI-DIRECTIONAL WRITE

摘要

A non-volatile memory cell (130) and associated method of use are disclosed. In accordance with various embodiments, the memory cell includes a switching device (132) and a resistive sense element (RSE) (110) connected in series between first (138) and second (141A) control lines. The first control line is supplied with a variable voltage and the second control line is maintained at a fixed reference voltage. A first resistive state of the RSE is programmed by lowering the variable voltage of the first control line below the fixed reference voltage of the second control line to flow a body-drain current through the switching device. A different, second resistive state of the RSE is programmed by raising the variable voltage of the first control line above the fixed reference voltage to flow a drain-source current through the switching device.