METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING TANTALUM BASE NITRIDE

摘要

PURPOSE: A semiconductor device manufacturing method which uses a tantalum nitride film is provided to arrange the tantalum nitride film which has low resistivity by controlling nitrogen content of the tantalum nitride film while nitrifying a tantalum film. CONSTITUTION: A capacitor is comprised of a lower electrode, a dielectric layer, and an upper electrode. The lower electrode or the upper electrode includes a tantalum nitride film(104). A tantalum film is deposited using an atomic layer deposition method. The tantalum film is exposed to a nitrogen-containing gas.