MATHOD FOR MANUFACTURING NANO III-V SEMICONDUCTOR SOLAR CELL BASED ON SILICON SUBSTRATE

摘要

PURPOSE: A silicon substrate based nano III-V compound solar cell manufacturing method is provided to reduce manufacturing costs by growing a rod shaped III-V compound which has a tandem structure on a silicon substrate. CONSTITUTION: A silicon substrate(110,110') has crystalline properties by eliminating a natural oxide film at a predetermined high temperature after etching a surface. A metal electrode and an dielectric layer(130,130') are deposited on the silicon substrate after forming a seed layer of III-V compound materials. The III-V compound materials are grown into rod shaped solar cells(140,140') according to a predetermined growth condition after patterning a deposited electrode and a dielectric layer. A transparent electrode is formed on the outside of the solar cells.