| 摘要 |
PURPOSE: Magnetic tunnel junction cells for having perpendicular anisotropy are provided to improve high areal density having increased tolerance against process variables by allowing a reduced switching current having thermal stability. CONSTITUTION: A magnetic tunnel junction cell(100) includes a ferromagnetic free layer(110) and a ferromagnetic reference layer(140). An oxide barrier layer(130) is placed between the ferromagnetic reference layer and the ferromagnetic free layer. The ferromagnetic reference layer and the ferromagnetic free layer are separated by the oxide barrier layer or a non-magnetic tunnel barrier. An enhancement layer(120) is placed to be contiguous to the oxide barrier layer and the ferromagnetic free layer. The ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer have related magnetization orientation. |
