SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor integrated circuit and a manufacturing method thereof are provided to additionally arrange a parasitic capacitor in series to a basic parasitic capacitor which is formed near a silicon via, thereby minimizing a self capacitance value. CONSTITUTION: A chip through via(220) penetrates a semiconductor chip. An insulating layer(230) insulates the semiconductor chip from the ship through via. A doped region(240) is formed between the semiconductor chip and the insulating layer. The doped region is doped with impurities which have a conductivity type different from the semiconductor chip.