| 摘要 |
PURPOSE: A power-up signal generating circuit of a semiconductor device is provided to stably power up the semiconductor device by generating a power-up signal of an internal voltage according to a power-up state of an external voltage. CONSTITUTION: A first power-up unit(200) generates a first power-up signal according to a level of a first voltage. A second power-up unit(300) generates a second power-up signal according to a level of a second voltage and prevents the transition of the second power-up signal in response to the first power-up signal. A third power-up unit(400) generates a third power-up signal according to a level of a second internal voltage and prevents the transition of the third power-up signal in response to the first power-up signal. A signal combining unit(500) generates a power-up signal by combining the first power-up signal, the second power-up signal, and the third power-up signal.
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