| 摘要 |
The present invention provides an etchant composition used for etching metal layer of electrodes for forming thin film transistor-liquid crystal device (TFT-LCD). The etchant composition contains 45-70wt% of phosphoric acid, 1.5-6wt% of nitric acid, 10-30wt% of acetic acid, 0.01-3wt% of Mo etching control agent, 0.1-1.99wt% of sulphate, and the left is water. The etchant composition for the TFT-LCD is suitable for wet-etching Mo single-layer composing the source/drain electrode and Mo/AlNd double-layer composing the grid electrode or Mo/Al/Mo three-layer in absence of side etching or projection condition, and providing excellent taper etching. In addition, the production process is simplified, the production ability is improved and the production cost is reduced because dry-etching is not used. Further, the excellent taper may be even acquired by one-time of wet-etching Mo single-layer, Mo/AlNd double-layer and Mo/Al/Mo three-layer without using environmentally harmful material (for example perchlorite, unsteady material reducing life of the etchant composition or fluorin based compound etching glass as substrate). |
