METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE IMPROVED ETCH UNIFORMITY

摘要

PURPOSE: A semiconductor device manufacturing method for improving etching uniformity is provided to improve etch uniformity of a plasma etching process using a impurity region formed inside of an etched layer as an etch stop barrier. CONSTITUTION: A plurality of patterns(201A,201B) is formed. An etched layer is formed for gap-filling the plurality of patterns. An impurity region(208A,208B) is formed within the etched layer. The etched layer is etched using the impurity region as an etch stop barrier. The depths and the line widths of the patterns are different from each other.