| 摘要 |
PURPOSE: A nonvolatile memory device and a programming method thereof are provided to minimize current consumption by suppressing coupling capacitance in a bit line setup. CONSTITUTION: A bit line selection unit(10) is connected to a first bit line and a second bit line. A page buffer(20) includes a main data transmission switch, a first latch, a temporary data transmission switch, and a second latch. The potential of a second bit line is set up according to a data level stored in the first latch and the second latch by precharging the first bit line with a power voltage level and turning on the main data transmission switch and the temporary data transmission switch.
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