| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to improve external light extraction efficiency by forming a plurality of voids inside of a wavelength conversion layer. CONSTITUTION: A semiconductor light emitting device comprises a light emitting structure(120) and a wavelength conversion layer(130). The light emitting structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The wavelength conversion layer is formed on a part of a light emitting surface of the light emitting structure. The wavelength conversion layer is comprised of a transparent material which contains quantum dots or fluorescent particles. A void(130a) is formed inside of the wavelength conversion layer. |
