| 摘要 |
PURPOSE: A light emitting device is provided to prevent degradation of electrical or optical properties by preventing generation of a defect of a nitride semiconductor layer inside of a light emitting structure. CONSTITUTION: A nitride semiconductor layer is formed on a substrate(110). A bending prevention layer(140) is formed by alternatively laminating an AlN layer and a GaN layer on the nitride semiconductor layer. A light emitting structure comprises a first conductivity type semiconductor layer, and active layer, and a second conductivity type semiconductor layer on the bending prevention layer. A buffer layer(120) is formed on the substrate and the bending prevention layer. |
