发明名称 Metallic contacts for photovoltaic devices and low temperature fabrication processes thereof
摘要 Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20°Cto about 275°Cduring the anneal process, for example, at about 150°Cfor about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150°Cto about 275°Cfor a time period of at least about 0.5 minutes during the anneal process.
申请公布号 EP2450957(A2) 申请公布日期 2012.05.09
申请号 EP20110187679 申请日期 2011.11.03
申请人 ALTA DEVICES, INC. 发明人 KAYES, BRENDAN M.;KIZILYALLI, ISIK C.;NIE, HUI;ARCHER, MELISSA J.
分类号 H01L31/0224;C23C16/06;C23C16/30;H01L31/0304;H01L31/0735;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项
地址