A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to supply a semiconductor device with good electrical features and high reliability. CONSTITUTION: A first insulating film(102) includes silicon, nitrogen, and oxygen. A second insulating film includes silicon and oxygen on the first insulating film. The first insulating film is heated to eliminate at least a part of hydrogen from the first insulating film. An oxide semiconductor film(111) is formed on the second insulating film after the insulating film is heated.