发明名称 |
Organic thin film transistor, method of fabricating the same, and gate insulating layer used in the same |
摘要 |
An organic thin film transistor is disclosed, which comprises an azole-metal complex compound used as the gate insulating layer. The method of making the self-assembled gate insulating layer is a water-based processing method that enables the azole-metal complex compound to be self-formed on the patterned gate electrode in a water-based solution and serves as a gate insulating layer. The organic thin film transistor (OTFT) of the present invention comprises the azole-metal complex compound used in the gate insulating layer, therefore can be manufactured in a simple, quick, easy way for large quantities, and low cost. |
申请公布号 |
US8174004(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20090585422 |
申请日期 |
2009.09.15 |
申请人 |
CHEN SHENG-WEI;WANG CHUNG-HUA;HWANG JENN-CHANG;NATIONAL TSING HUA UNIVERSITY |
发明人 |
CHEN SHENG-WEI;WANG CHUNG-HUA;HWANG JENN-CHANG |
分类号 |
H01L35/24 |
主分类号 |
H01L35/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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