发明名称 |
CMOS image device with local impurity region |
摘要 |
According to a CMOS image device and a method of manufacturing same, dark current is decreased by a local impurity region. The image device includes a semiconductor substrate, and a transfer gate formed on a predetermined portion of the semiconductor substrate and electrically insulated from the semiconductor substrate. A photodiode is formed in the semiconductor substrate on one side of the transfer gate, and a floating diffusion region is formed on the semiconductor substrate in the other side of the transfer gate. A local impurity region of a first conductivity type is formed to be partially overlapped the transfer gate between the photodiode and the floating diffusion region. |
申请公布号 |
US8174057(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20090395757 |
申请日期 |
2009.03.02 |
申请人 |
LEE SEOK-HA;ROH JAE-SEOB;JUNG JONG-WAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEOK-HA;ROH JAE-SEOB;JUNG JONG-WAN |
分类号 |
H01L31/062;H01L31/113 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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