发明名称 |
High efficiency group III nitride LED with lenticular surface |
摘要 |
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region. |
申请公布号 |
US8174037(B2) |
申请公布日期 |
2012.05.08 |
申请号 |
US20050082470 |
申请日期 |
2005.03.17 |
申请人 |
EDMOND JOHN ADAM;SLATER, JR. DAVID BEARDSLEY;BHARATHAN JAYESH;DONOFRIO MATTHEW;CREE, INC. |
发明人 |
EDMOND JOHN ADAM;SLATER, JR. DAVID BEARDSLEY;BHARATHAN JAYESH;DONOFRIO MATTHEW |
分类号 |
H01L33/00;H01L33/22;H01L33/38;H01L33/44 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|