| 摘要 |
A thin-film transistor substrate includes; gate lines which extend in a first direction, the gate lines including a first gate line and a second gate line, the first gate line disposed adjacent to and previous to the second gate line, data lines which are insulated from the gate lines and extend in a second direction perpendicular to the first direction, a pixel electrode formed in a region where the first gate line and the second gate lines cross the data lines and connected to the second gate line, and a repair pattern which at least partially overlaps the first gate line, the repair pattern comprising a plurality of connection patterns, wherein the connection patterns extend from the pixel electrode in the second direction toward the first gate line, have a predetermined width measured in the first direction, and are arranged at predetermined intervals along the first direction. |
