发明名称 High frequency amplifier
摘要 A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device.
申请公布号 US8174323(B2) 申请公布日期 2012.05.08
申请号 US201113303955 申请日期 2011.11.23
申请人 OKUDA TOSHIO;MITSUBISHI ELECTRIC CORPORATION 发明人 OKUDA TOSHIO
分类号 H03F3/04 主分类号 H03F3/04
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